? 2008 ixys corporation, all rights reserved ds99905a(08/08 ) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 250 v v dgr t j = 25 c to 150 c, r gs = 1m 250 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c 110 a i lrms lead current limit, rms 75 a i dm t c = 25c, pulse width limited by t jm 300 a i a t c = 25 c25a e as t c = 25 c1j dv/dt i s i dm , v dd v dss , t j 150 c 10 v/ns p d t c = 25c 694 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque 1.13 / 10 nm/lb.in. weight 6g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 250 v v gs(th) v ds = v gs , i d = 3ma 2.5 4.5 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss 10 a v gs = 0v t j = 125 c 1 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , notes 1, 2 24 m trenchhv tm power mosfet hiperfet tm n-channel enhancement mode avalanche rated IXFH110N25T v dss = 250v i d25 = 110a r ds(on) 24m features z international standard package z avalanche rated advantages z easy to mount z space savings z high power density applications z dc-dc converters z battery chargers z switched-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies g = gate d = drain s = source tab = drain g d s to-247 (ixfh) (tab)
ixys reserves the right to change limits, test conditions, and dimensions. IXFH110N25T symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 65 110 s c iss 9400 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 850 pf c rss 55 pf t d(on) 19 ns t r 27 ns t d(off) 60 ns t f 27 ns q g(on) 157 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 25a 40 nc q gd 50 nc r thjc 0.18 c/w r thcs 0.21 c/w source-drain diode symbol test conditions characteristic values t j = 25c unless otherwise specified) min. typ. max. i s v gs = 0v 110 a i sm pulse width limited by t jm 350 a v sd i f = 55a, v gs = 0v, note 1 1.2 v t rr 170 ns q rm 946 nc i rm 17 a notes: 1. pulse test, t 300 m s; duty cycle, d 2%. 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-247ad outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ?p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc terminals: 1 - gate 2 - drain 3 - source tab - drain 1 2 3 i f = 55a, -di/dt = 250a/ s v r = 100v, v gs = 0v resistive switching times v gs = 15v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 , r g = 2 (external)
? 2008 ixys corporation, all rights reserved IXFH110N25T fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v 5.5v fig. 2. extended output characteristics @ 25oc 0 25 50 75 100 125 150 175 200 225 250 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 100 110 0123456 v ds - volts i d - amperes v gs = 10v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 55a value vs. junction temperature 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 110a i d = 55a fig. 5. r ds(on) normalized to i d = 55a value vs. drain current 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 0 20 40 60 80 100 120 140 160 180 200 220 240 260 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes external lead current limit
ixys reserves the right to change limits, test conditions, and dimensions. IXFH110N25T fig. 7. input admittance 0 20 40 60 80 100 120 140 160 3.4 3.8 4.2 4.6 5.0 5.4 5.8 6.2 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 q g - nanocoulombs v gs - volts v ds = 125v i d = 25a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.00 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2008 ixys corporation, all rights reserved ixys ref: t_110n25t(8w)08-11-08-a IXFH110N25T fig. 14. resistive turn-on rise time vs. drain current 20 21 22 23 24 25 26 27 28 29 20 30 40 50 60 70 80 90 100 110 120 i d - amperes t r - nanoseconds r g = 2 v gs = 15v v ds = 125v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 25 30 35 40 45 50 2345678910 r g - ohms t r - nanoseconds 19 20 21 22 23 24 25 26 27 28 29 30 31 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 110a, 55a fig. 16. resistive turn-off switching times vs. junction temperature 14 16 18 20 22 24 26 28 30 32 34 36 38 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 52 54 56 58 60 62 64 66 68 70 72 74 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 2 , v gs = 15v v ds = 125v i d = 55a i d = 110a fig. 17. resistive turn-off switching times vs. drain current 21 22 23 24 25 26 27 28 29 30 20 30 40 50 60 70 80 90 100 110 120 i d - amperes t f - nanoseconds 45 50 55 60 65 70 75 80 85 90 t d ( o f f ) - nanoseconds t f t d(off ) - - - - r g = 2 , v gs = 15v v ds = 125v t j = 25oc t j = 125oc t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 21 22 23 24 25 26 27 28 29 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 2 v gs = 15v v ds = 125v i d = 110a i d = 55a fig. 18. resistive turn-off switching times vs. gate resistance 10 20 30 40 50 60 70 80 90 100 2345678910 r g - ohms t f - nanoseconds 40 60 80 100 120 140 160 180 200 220 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 15v v ds = 125v i d = 55a, 110a
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